| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| AOTF292L | MOS(场效应管) |
AO/万代 |
TO-220F |
18+ |
21000 |
|||
| AOTF10N60 | MOS(场效应管) |
AO/万代 |
TO-220F |
18+ |
5999 |
|||
| M3090M6 | MOS(场效应管) |
UBIQ/力祥半导体 |
PRPAK5X6 |
18+ |
10000 |
|||
| M3014M2 | MOS(场效应管) |
UBIQ/力祥半导体 |
PRPAK3X3 |
18+ |
10000 |
|||
| 024N06N | MOS(场效应管) |
INFINEON/英飞凌 |
TO-262 |
18+ |
10000 |
|||
| 4N04L08 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-252 |
18+ |
10000 |
|||
| 4N06H1 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
18+ |
10000 |
|||
| 108N15N | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
18+ |
10000 |
|||
| 3PN0403 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
18+ |
10000 |
|||
| B90P06 | MOS(场效应管) |
EMC/杰力 |
TO-251 |
18+ |
10000 |
|||
| 097N04L | MOS(场效应管) |
INFINEON/英飞凌 |
PG-TSDSON-8 |
18+ |
10000 |
|||
| 093N04LS | MOS(场效应管) |
INFINEON/英飞凌 |
PG-TDSON-8 |
12+ |
10000 |
|||
| 050NE2LS | MOS(场效应管) |
INFINEON/英飞凌 |
PG-TDSON-8 |
12+ |
10000 |
|||
| 018NE2LI | MOS(场效应管) |
INFINEON/英飞凌 |
PG-TDSON-8 |
12+ |
10000 |
|||
| W482 | MOS(场效应管) |
AO/万代 |
TO-262 |
18+ |
10000 |
|||
| T5B60D | MOS(场效应管) |
AO/万代 |
TO-220 |
18+ |
10000 |
|||
| T292L | MOS(场效应管) |
AO/万代 |
TO-220 |
18+ |
10000 |
|||
| 62604 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
18+ |
10000 |
|||
| 32306 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
18+ |
10000 |
|||
| 21377 | MOS(场效应管) |
AO/万代 |
DFN3x3EP |
18+ |
10000 |
|||
| 7510 | MOS(场效应管) |
AO/万代 |
DFN3.3x3.3 |
18+ |
10000 |
|||
| 6920 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
15+ |
10000 |
|||
| 6484 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
18+ |
10000 |
|||
| K20B60D1 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
10000 |
|||
| D478 | MOS(场效应管) |
AO/万代 |
TO-252 |
18+ |
10000 |
|||
| B10B60D | MOS(场效应管) |
AO/万代 |
TO-263 |
18+ |
10000 |
|||
| K3798 | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
12+ |
10000 |
|||
| 8062H | MOS(场效应管) |
TOSHIBA/东芝 |
TSONAdvance |
18+ |
21000 |
|||
| M3056M6 | MOS(场效应管) |
UBIQ/力祥半导体 |
PRPAK5X6 |
18+ |
21000 |
|||
| M3002M3 | MOS(场效应管) |
UBIQ/力祥半导体 |
DFN-83.3x3.3 |
18+ |
21000 |