| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| AOTF10B60D | MOS(场效应管) |
AO/万代 |
TO-220F |
18+ |
2100 |
|||
| AOK20B135 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
5999 |
|||
| M3092M6 | MOS(场效应管) |
UBIQ/力祥半导体 |
PRPAK5X6 |
18+ |
10000 |
|||
| LR3717 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-252 |
18+ |
2100 |
|||
| 6CWH02FN | MOS(场效应管) |
VISHAY/威世 |
TO-252 |
18+ |
5999 |
|||
| 3N06L45 | MOS(场效应管) |
INFINEON/英飞凌 |
PG-TDSON-8 |
18+ |
10000 |
|||
| EMB04N03H | MOS(场效应管) |
EMC/杰力 |
EDFN5x6 |
18+ |
21000 |
|||
| AOK40B60D | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
1850 |
|||
| AOK20B120 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
1820 |
|||
| AOD4T60 | MOS(场效应管) |
AO/万代 |
TO-252 |
18+ |
1963 |
|||
| SN803A | MOS(场效应管) |
AO/万代 |
TO-220 |
18+ |
2093 |
|||
| MDD4N60 | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-252 |
18+ |
2000 |
|||
| IPB65R660CFD | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
18+ |
2000 |
|||
| AOTF15B60D | MOS(场效应管) |
AO/万代 |
TO-220F |
18+ |
2000 |
|||
| AOTF14N50 | MOS(场效应管) |
AO/万代 |
TO-220F |
18+ |
2000 |
|||
| T20B65M1 | MOS(场效应管) |
AO/万代 |
TO-220 |
18+ |
2100 |
|||
| 6598 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
18+ |
2100 |
|||
| 6162 | MOS(场效应管) |
AO/万代 |
DFN5X6 |
18+ |
2100 |
|||
| K60B65H1 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
2100 |
|||
| K30B120D2 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
2100 |
|||
| D538 | MOS(场效应管) |
AO/万代 |
TO-252 |
18+ |
2100 |
|||
| K3812 | MOS(场效应管) |
NEC |
TO-263 |
18+ |
2100 |
|||
| K3699 | MOS(场效应管) |
FUJITSU/富士通 |
TO-220F |
09+ |
2100 |
|||
| J599 | MOS(场效应管) |
NEC |
TO-252 |
18+ |
2100 |
|||
| K10B60D | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
2034 |
|||
| B11N60 | MOS(场效应管) |
AO/万代 |
TO-263 |
18+ |
2012 |
|||
| AOT11C60P | MOS(场效应管) |
AO/万代 |
TO-220 |
18+ |
913 |
|||
| 7246 | MOS(场效应管) |
AO/万代 |
DFN3x3EP |
18+ |
2000 |
|||
| 65E6600 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-251A |
18+ |
1200 |
|||
| K10N90 | MOS(场效应管) |
AO/万代 |
TO-247 |
18+ |
1176 |